METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED FEATURES ? SIMPLIFIED AMPLIFIER DESIGN ? SUITABLE FOR BROAD BAND APPLICATIONS ? LOW Crss ? USEFUL PO AT 1GHz ? LOW NOISE ? HIGH GAIN – 13 dB MINIMUM APPLICATIONS ? HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400

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SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Low C(rss)\n? Useful P(o) at 1 GHz\n? Low noise\n? High gain - 12 dB minimum;

TT Electronics

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Features ? 0.6mm Profile – Ideal for Low Profile Applications ? PCB Footprint of 4mm2 ? Low Gate Threshold Voltage ? Fast Switching Speed ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? For automotive applications requiring spe

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DIODES

美臺半導(dǎo)體

Gas Flow Transmitter

文件：331.25 Kbytes 頁數(shù)：2 Pages

TTELEC

DSO1000A/B Series

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KEYSIGHT

是德科技