絲印：D08；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

文件：3.94238 Mbytes 頁數(shù)：38 Pages

MICROCHIP

微芯科技

絲?。?a target="_blank" title="Marking" href="/d0865c6/marking.html">D0865C6；Package：PG-HDSOP-10-1；6th Generation CoolSiC??650V SiC Schottky Diode

6th Generation CoolSiC? 650V SiC Schottky Diode The CoolSiC? generation ч ?Gч? is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal sys

文件：680.09 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/d085n03m/marking.html">D085N03M；Package：PDFN3333-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TFD085N03M uses advanced trench technology to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature VDS =30V , ID =25A RDS(

文件：3.15505 Mbytes 頁數(shù)：6 Pages

TUOFENG

拓鋒半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/d085aj/marking.html">D085AJ；Package：SMC；3000W Transient Voltage Suppressor

文件：591.5 Kbytes 頁數(shù)：7 Pages

WEEN

瑞能半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/d085cj/marking.html">D085CJ；Package：SMC；3000W Transient Voltage Suppressor

文件：591.5 Kbytes 頁數(shù)：7 Pages

WEEN

瑞能半導(dǎo)體

絲印：D08P16；Package：DPAK；Standard power diode

文件：405.99 Kbytes 頁數(shù)：10 Pages

WEEN

瑞能半導(dǎo)體

NPN SILICON TRANSISTOR

13001 Transistor Chip Manual █ Introduction to the chip Chip size: 4 inches (100mm) Chip code: D083AJ-00 Chip thickness: 240±20μm Die size: 830×830μm 2 Welding position size: B pole 140×144μm 2 and E pole 180×140μm 2 Electrode metal: aluminum Back metal: gold

文件：27.99 Kbytes 頁數(shù)：1 Pages

HUASHAN

華汕電子器件

ALUMINUM NITRIDE

Features: ? Aluminum Nitride Material ? DC - 2.5 GHz Performance ? 250 Watt Input Power ? Solder Mountable General Description: The D08Z-50R0J2T-04C36-X is a leaded, 50 ohm Aluminum Nitride termination. It has an input power of 250 watts, while maintaining a constant mounting surface tempe

文件：134.57 Kbytes 頁數(shù)：1 Pages

BARRY

Vishay Barry

BeO

Features: ? BeO Material ? DC - 4 GHz Performance ? 250 Watt Input Power ? Solder Mountable General Description: The D08Z-50R0J99-00C36-X is a leaded 50 ohm, BeO termination. It has an input power of 250 watts max, while maintaining a constant mounting surface temperature of 100oC. It o

文件：159.88 Kbytes 頁數(shù)：1 Pages

BARRY

Vishay Barry

Raychem S200 Shield Terminators

文件：637.29 Kbytes 頁數(shù)：2 Pages

TEC

泰科電子