262144-word X 8-bit High Speed CMOS Static RAM

Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package l

文件：205.29 Kbytes 頁數(shù)：11 Pages

SONYSony Corporation

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262144-word X 8-bit High Speed CMOS Static RAM

Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package l

文件：205.29 Kbytes 頁數(shù)：11 Pages

SONYSony Corporation

索尼

262144-word X 8-bit High Speed CMOS Static RAM

Description The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption and high speed and board package l

文件：205.29 Kbytes 頁數(shù)：11 Pages

SONYSony Corporation

索尼

262144-word X 8-bit High Speed CMOS Static RAM

Sony

索尼

262144-word × 8-bit High Speed CMOS Static RAM

Description\nThe CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits.\nA polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.\nSpecial feature are low power consumption and high speed and board package line-up.\ ? Fast access time (Access time)\n?? -85LL 85ns (Max.)\n?? -10LL 100ns (Max.)\n? Low standby current 40μA (Max.)\n? Low data retention current 24μA (Max.)\n? Single +5V supply: 4.5V to 5.5V.\n? Low voltage date retention : 2.0V (Min.)\n? Broad package line-up\n?? CXK582000TM/YM 8mm × 20mm 32 pin\n??;

Sony

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