131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 頁數(shù)：12 Pages

SONYSony Corporation

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131072-word x 8-bit High Speed CMOS Static RAM

Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package lin

文件：288.88 Kbytes 頁數(shù)：12 Pages

SONYSony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

文件：548.35 Kbytes 頁數(shù)：11 Pages

SONYSony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

文件：548.35 Kbytes 頁數(shù)：11 Pages

SONYSony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

文件：548.35 Kbytes 頁數(shù)：11 Pages

SONYSony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

文件：548.35 Kbytes 頁數(shù)：11 Pages

SONYSony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

文件：548.35 Kbytes 頁數(shù)：11 Pages

SONYSony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

文件：548.35 Kbytes 頁數(shù)：11 Pages

SONYSony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

文件：548.35 Kbytes 頁數(shù)：11 Pages

SONYSony Corporation

索尼

131072-word x 8-bit HIGH SPEED COMS STATIC RAM

Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required

文件：548.35 Kbytes 頁數(shù)：11 Pages

SONYSony Corporation

索尼