CSD95411 Synchronous Buck NexFET? Smart Power Stage

1 Features ? Peak continuous current: 65-A ? Peak efficiency (fSW = 600 kHz, LOUT = 150 nH): Over 94 ? High-frequency operation: up to 1.75 MHz ? Diode emulation function ? Temperature compensated bi-directional current sense ? Analog temperature output ? Fault monitoring ? 3.3-V and 5-V

文件：1.01997 Mbytes 頁數(shù)：15 Pages

TI

德州儀器

CSD95411 Synchronous Buck NexFET? Smart Power Stage

1 Features ? Peak continuous current: 65-A ? Peak efficiency (fSW = 600 kHz, LOUT = 150 nH): Over 94% ? High-frequency operation: up to 1.75 MHz ? Diode emulation function ? Temperature compensated bi-directional current sense ? Analog temperature output ? Fault monitoring ? 3.3-V an

文件：484.43 Kbytes 頁數(shù)：9 Pages

TI

德州儀器

具有集成電容器的 50A 功率級

CSD95411NexFET? 功率級是一款針對高功率、高密度同步降壓轉(zhuǎn)換器進行高度優(yōu)化的設(shè)計。該器件集成了驅(qū)動器 IC 和功率 MOSFET 來完善功率級開關(guān)功能。該組合采用 5mm × 6mm 小型封裝，可實現(xiàn)高電流、高效率以及高速切換功能。該功率級還集成了準確電流檢測和溫度感測功能，可簡化系統(tǒng)設(shè)計并提高準確度。經(jīng)過優(yōu)化的 PCB 封裝可幫助減少設(shè)計時間并輕松完成總體系統(tǒng)設(shè)計。 ? 峰值連續(xù)電流： 65A\n? 工作頻率高：高達 1.75MHz\n? 溫度補償雙向電流感應(yīng)\n? 故障監(jiān)控\n? 三態(tài) PWM 輸入\n? 用于擊穿保護的經(jīng)優(yōu)化死區(qū)時間\n? 超低電感封裝\n? 耐熱增強型頂部散熱\n? 無鹵素;

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/95411rrb/marking.html">95411RRB；Package：QFN；CSD95411 Synchronous Buck NexFET? Smart Power Stage

1 Features ? Peak continuous current: 65-A ? Peak efficiency (fSW = 600 kHz, LOUT = 150 nH): Over 94 ? High-frequency operation: up to 1.75 MHz ? Diode emulation function ? Temperature compensated bi-directional current sense ? Analog temperature output ? Fault monitoring ? 3.3-V and 5-V

文件：1.01997 Mbytes 頁數(shù)：15 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/95411rrb/marking.html">95411RRB；Package：VQFN-CLIP；CSD95411 Synchronous Buck NexFET? Smart Power Stage

1 Features ? Peak continuous current: 65-A ? Peak efficiency (fSW = 600 kHz, LOUT = 150 nH): Over 94% ? High-frequency operation: up to 1.75 MHz ? Diode emulation function ? Temperature compensated bi-directional current sense ? Analog temperature output ? Fault monitoring ? 3.3-V an

文件：484.43 Kbytes 頁數(shù)：9 Pages

TI

德州儀器

絲印：95411RRB；Package：VQFN-CLIP；CSD95411 Synchronous Buck NexFET? Smart Power Stage

1 Features ? Peak continuous current: 65-A ? Peak efficiency (fSW = 600 kHz, LOUT = 150 nH): Over 94% ? High-frequency operation: up to 1.75 MHz ? Diode emulation function ? Temperature compensated bi-directional current sense ? Analog temperature output ? Fault monitoring ? 3.3-V an

文件：484.43 Kbytes 頁數(shù)：9 Pages

TI

德州儀器

絲印：95411RRB；Package：VQFN-CLIP；CSD95411 Synchronous Buck NexFET? Smart Power Stage

1 Features ? Peak continuous current: 65-A ? Peak efficiency (fSW = 600 kHz, LOUT = 150 nH): Over 94% ? High-frequency operation: up to 1.75 MHz ? Diode emulation function ? Temperature compensated bi-directional current sense ? Analog temperature output ? Fault monitoring ? 3.3-V an

文件：484.43 Kbytes 頁數(shù)：9 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/95411rrb/marking.html">95411RRB；Package：QFN；CSD95411 Synchronous Buck NexFET? Smart Power Stage

1 Features ? Peak continuous current: 65-A ? Peak efficiency (fSW = 600 kHz, LOUT = 150 nH): Over 94 ? High-frequency operation: up to 1.75 MHz ? Diode emulation function ? Temperature compensated bi-directional current sense ? Analog temperature output ? Fault monitoring ? 3.3-V and 5-V

文件：1.01997 Mbytes 頁數(shù)：15 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/95411rrb/marking.html">95411RRB；Package：VQFN-CLIP；CSD95411 Synchronous Buck NexFET? Smart Power Stage

1 Features ? Peak continuous current: 65-A ? Peak efficiency (fSW = 600 kHz, LOUT = 150 nH): Over 94% ? High-frequency operation: up to 1.75 MHz ? Diode emulation function ? Temperature compensated bi-directional current sense ? Analog temperature output ? Fault monitoring ? 3.3-V an

文件：484.43 Kbytes 頁數(shù)：9 Pages

TI

德州儀器