首頁(yè) >CSD25202W15>規(guī)格書(shū)列表
| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
CSD25202W15 | 絲?。?a target="_blank" title="Marking" href="/25202/marking.html">25202;Package:DSBGA;CSD25202W15 20-V P-Channel NexFET? Power MOSFET 1 Features 1? Low-Resistance ? Small Footprint 1.5 mm × 1.5 mm ? Gate ESD Protection –3 kV ? Pb Free ? RoHS Compliant ? Halogen Free ? Gate-Source Voltage Clamp 2 Applications ? Battery Management ? Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the 文件:471.48 Kbytes 頁(yè)數(shù):11 Pages | TI 德州儀器 | TI | |
CSD25202W15 | 20V P-Channel NexFET Power MOSFET 文件:416.25 Kbytes 頁(yè)數(shù):12 Pages | TI 德州儀器 | TI | |
CSD25202W15 | 采用 1.5mm x 1.5mm WLP 封裝、具有柵極 ESD 保護(hù)的單路、26mΩ、-20V、P 溝道 NexFET? 功率 MOSFET 這款 21mΩ,20V 器件設(shè)計(jì)用于在超薄且具有出色散熱特性的 1.5mm × 1.5mm 小外形封裝內(nèi)提供最低的導(dǎo)通電阻和柵極電荷。 低導(dǎo)通電阻與小型封裝尺寸和低高度結(jié)合在一起,使得此器件非常適合于電池供電運(yùn)行的空間受限應(yīng)用。 ? 低電阻\n? 柵極靜電放電 (ESD) 保護(hù) - 3kV\n? 符合 RoHS 環(huán)保標(biāo)準(zhǔn)\n? 柵 - 源電壓鉗位; | TI 德州儀器 | TI | |
CSD25202W15 20-V P-Channel NexFET? Power MOSFET 1 Features 1? Low-Resistance ? Small Footprint 1.5 mm × 1.5 mm ? Gate ESD Protection –3 kV ? Pb Free ? RoHS Compliant ? Halogen Free ? Gate-Source Voltage Clamp 2 Applications ? Battery Management ? Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the 文件:471.48 Kbytes 頁(yè)數(shù):11 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/25202/marking.html">25202;Package:DSBGA;CSD25202W15 20-V P-Channel NexFET? Power MOSFET 1 Features 1? Low-Resistance ? Small Footprint 1.5 mm × 1.5 mm ? Gate ESD Protection –3 kV ? Pb Free ? RoHS Compliant ? Halogen Free ? Gate-Source Voltage Clamp 2 Applications ? Battery Management ? Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the 文件:471.48 Kbytes 頁(yè)數(shù):11 Pages | TI 德州儀器 | TI | ||
CSD25202W15 20-V P-Channel NexFET? Power MOSFET 1 Features 1? Low-Resistance ? Small Footprint 1.5 mm × 1.5 mm ? Gate ESD Protection –3 kV ? Pb Free ? RoHS Compliant ? Halogen Free ? Gate-Source Voltage Clamp 2 Applications ? Battery Management ? Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the 文件:471.48 Kbytes 頁(yè)數(shù):11 Pages | TI 德州儀器 | TI | ||
CSD25202W15 20-V P-Channel NexFET Power MOSFET 文件:957.57 Kbytes 頁(yè)數(shù):15 Pages | TI 德州儀器 | TI | ||
20V P-Channel NexFET Power MOSFET 文件:416.25 Kbytes 頁(yè)數(shù):12 Pages | TI 德州儀器 | TI |
技術(shù)參數(shù)
- VGS (V):
-6
- Configuration:
Single
- Rds(on) max at VGS=4.5 V (mOhms):
26
- Rds(on) max at VGS=2.5 V (mOhms):
32
- Rds(on) max at VGS=1.8 V (mOhms):
52
- Id peak (Max) (A):
-38
- Id max cont (A):
-4
- QG typ (nC):
5.8
- QGD typ (nC):
0.8
- QGS typ (nC):
1.1
- VGSTH typ (V):
-0.75
- Package (mm):
WLP 1.5x1.5
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TI(德州儀器) |
2022+原裝正品 |
DSBGA-9 |
18000 |
支持工廠BOM表配單 公司只做原裝正品貨 |
詢價(jià) | ||
TI |
25+ |
DSBGA-9 |
7786 |
原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號(hào)開(kāi)票。 |
詢價(jià) | ||
TI |
23+ |
DSBGA9 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
TI |
16+ |
DSBGA |
10000 |
原裝正品 |
詢價(jià) | ||
TI |
25+ |
9-BGA |
3675 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
TI(德州儀器) |
2021+ |
DSBGA-9 |
499 |
詢價(jià) | |||
TI/德州儀器 |
24+ |
DSBGA-9 |
9600 |
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單! |
詢價(jià) | ||
TI(德州儀器) |
24+/25+ |
10000 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢價(jià) | |||
TEXAS INSTRUMENTS |
23+ |
DSBGA9 |
9600 |
全新原裝正品!一手貨源價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
22+ |
NA |
3450 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) |
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