絲印：CSD18534KCS；Package：TO-220；CSD18534KCS 60V N-Channel NexFET? Power MOSFET

1 Features ? Ultra-low Qg and Qgd ? Low thermal resistance ? Avalanche rated ? Logic level ? Pb-Free terminal plating ? RoHS compliant ? Halogen free ? TO-220 plastic package 2 Applications ? DC-DC conversion ? Secondary side synchronous rectifier ? Motor control 3 Description Th

文件：1.21103 Mbytes 頁數(shù)：14 Pages

TI

德州儀器

CSD18534KCS 60V N-Channel NexFET? Power MOSFET

1 Features ? Ultra-low Qg and Qgd ? Low thermal resistance ? Avalanche rated ? Logic level ? Pb-Free terminal plating ? RoHS compliant ? Halogen free ? TO-220 plastic package 2 Applications ? DC-DC conversion ? Secondary side synchronous rectifier ? Motor control 3 Description Th

文件：1.21103 Mbytes 頁數(shù)：14 Pages

TI

德州儀器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：322.26 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 60 V (D-S) MOSFET

文件：999.52 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體