絲?。?strong>CSD18533KCS；Package：TO-220；CSD18533KCS 60V N-Channel NexFET? Power MOSFET

1 Features ? Ultra-low Qg and Qgd ? Low thermal resistance ? Avalanche rated ? Logic level ? Pb-free terminal plating ? RoHS compliant ? Halogen free ? TO-220 plastic package 2 Applications ? DC-DC conversion ? Secondary side synchronous rectifier ? Motor control 3 Description Th

文件：880.66 Kbytes 頁數(shù)：14 Pages

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德州儀器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：322.04 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

60-V, N-Channel NexFET Power MOSFETs

文件：699.09 Kbytes 頁數(shù)：9 Pages

TI

德州儀器

絲印：CSD18533KCS；Package：TO-220；CSD18533KCS 60V N-Channel NexFET? Power MOSFET

1 Features ? Ultra-low Qg and Qgd ? Low thermal resistance ? Avalanche rated ? Logic level ? Pb-free terminal plating ? RoHS compliant ? Halogen free ? TO-220 plastic package 2 Applications ? DC-DC conversion ? Secondary side synchronous rectifier ? Motor control 3 Description Th

文件：880.66 Kbytes 頁數(shù)：14 Pages

TI

德州儀器

采用 TO-220 封裝的單路、6.3mΩ、60V、N 溝道 NexFET? 功率 MOSFET

這款 5.0mΩ，60V TO-220 NexFET 功率 MOSFET 被設(shè)計成在功率轉(zhuǎn)換應(yīng)用中最大限度地降低損耗。脈沖持續(xù)時間 ≤ 300μs，占空比 ≤ 2% ? 超低 Qg 和 Qgd\n? 低熱阻\n? 雪崩額定值\n? 邏輯電平\n? 無鉛端子鍍層\n? 符合 RoHS 環(huán)保標(biāo)準(zhǔn)\n? 無鹵素\n? 晶體管 (TO)-220 塑料封裝;

TI

德州儀器