| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
CPH6443 | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features ? ON-resistance RDS(on)1=28mΩ(typ.) ? 4V drive ? Halogen free compliance ? Protection diode in 文件:377.54 Kbytes 頁數(shù):4 Pages | SANYO 三洋 | SANYO | |
CPH6443 | Single N-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features ? Low On-Resistance ? 4V driv 文件:531.2 Kbytes 頁數(shù):5 Pages | ONSEMI 安森美半導體 | ONSEMI | |
CPH6443 | Single N-Channel Power MOSFET, 35V, 6A, 37mΩ This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. ? Low On-Resistance\n? Improves Efficiency by Reducing Conduction Losses,Reduces Heat Dissipation\n? ESD Diode-Protected Gate\n? ESD Resistance\n? RoHS compliance\n? Environmental Consideration\n? 4V Drive; | ONSEMI 安森美半導體 | ONSEMI | |
Single N-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features ? Low On-Resistance ? 4V driv 文件:531.2 Kbytes 頁數(shù):5 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
Single N-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features ? Low On-Resistance ? 4V driv 文件:531.2 Kbytes 頁數(shù):5 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
General-Purpose Switching Device Applications 文件:557.48 Kbytes 頁數(shù):7 Pages | SANYO 三洋 | SANYO | ||
General-Purpose Switching Device Applications 文件:557.48 Kbytes 頁數(shù):7 Pages | SANYO 三洋 | SANYO | ||
場效應管(MOSFET) | SANYOU 三友 | SANYOU | ||
Package:SOT-23-6;包裝:管件 類別:分立半導體產(chǎn)品 晶體管 - FET,MOSFET - 單個 描述:MOSFET N-CH 35V 6A CPH6 | ONSEMI 安森美半導體 | ONSEMI |
技術(shù)參數(shù)
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
35
- VGS Max (V):
20
- VGS(th) Max (V):
2.6
- ID Max (A):
6
- PD Max (W):
1.6
- RDS(on) Max @ VGS = 4.5 V(mΩ):
61
- RDS(on) Max @ VGS = 10 V(mΩ):
37
- Qg Typ @ VGS = 10 V (nC):
10
- Ciss Typ (pF):
470
- Package Type:
CPH-6
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SYFOREVER |
25+ |
SOT-363 |
20300 |
SYFOREVER原裝特價CPH6443即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
ON/安森美 |
20+ |
SOT-363 |
120000 |
原裝正品 可含稅交易 |
詢價 | ||
ON/安森美 |
23+ |
SOT-363 |
100586 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費! |
詢價 | ||
SANYO/三洋 |
2025+ |
SOT-363 |
5000 |
原裝進口價格優(yōu) 請找坤融電子! |
詢價 | ||
ON |
2022+ |
CPH-6 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
NK/南科功率 |
2025+ |
SOT-363 |
986966 |
國產(chǎn) |
詢價 | ||
ONSEMI/安森美 |
2511 |
TSOP-6 |
360000 |
電子元器件采購降本30%!原廠直采,砍掉中間差價 |
詢價 | ||
ON |
24+/25+ |
3000 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
ON |
23+ |
SOT23-6 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 |
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