Packaging specifications

surface mounting type

文件：373.8 Kbytes 頁數(shù)：8 Pages

ROHM

羅姆

General Purpose Rectifier 500 mA Glass Passivated Rectifier Chip

PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 26 x 26 MILS Die Thickness 8.5 MILS Anode Bonding Pad Area 14 x 14 MILS Top Side Metalization Ni/Au - 5,000?/2,000? Back Side Metalization Ni/Au - 5,000?/2,000?

文件：215.45 Kbytes 頁數(shù)：2 Pages

CENTRAL

General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip

PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 51 x 51 MILS Die Thickness 10.2 MILS Anode Bonding Pad Area 36 x 36 MILS Top Side Metalization Ni/Au - 5,000?/2,000? Back Side Metalization Ni/Au - 5,000?/2,000?

文件：216 Kbytes 頁數(shù)：2 Pages

CENTRAL

General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip

PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 89 x 89 MILS Die Thickness 10.2 MILS Anode Bonding Pad Area 66 x 66 MILS Top Side Metalization Ni/Au - 5,000?/2,000? Back Side Metalization Ni/Au - 5,000?/2,000?

文件：217.34 Kbytes 頁數(shù)：2 Pages

CENTRAL

General Purpose Rectifier 8 Amp Glass Passivated Rectifier Chip

PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 10.4 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization Au - 5,000? Back Side Metalization Au - 2,000?

文件：211.45 Kbytes 頁數(shù)：2 Pages

CENTRAL

Schottky Diode High Voltage Schottky Diode Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000? Back Side Metalization Au - 12,000?

文件：717.96 Kbytes 頁數(shù)：2 Pages

CENTRAL

Schottky Diode Low VF Schottky Diode Chip

PROCESS DETAILS Die Size 14.6 x 14.6 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 11.8 x 11.8 MILS Top Side Metalization Al - 30,000? Back Side Metalization Au - 12,000?

文件：717.39 Kbytes 頁數(shù)：2 Pages

CENTRAL

Schottky Diode Chip

PROCESS DETAILS Die Size 8.3 x 8.3 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Metalization Al - 30,000? Back Side Metalization Au - 12,000?

文件：623.41 Kbytes 頁數(shù)：2 Pages

CENTRAL

Low VF Schottky Diode Chip

PROCESS DETAILS Die Size 8.3 x 8.3 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Metalization Al - 20,000? Back Side Metalization Au - 12,000?

文件：626.79 Kbytes 頁數(shù)：2 Pages

CENTRAL

Inductor for Digital AMP

Features： Core material:Ferrite Core and winding loss: www.codaca.com/DesignTool_Power-Inductor-Loss-Comparison.html Environmental:RoHS compliant, halogen free Weight:13.05g Moisture Sensitivity:Level (MSL) 1 (unlimited floor life at

文件：811.2 Kbytes 頁數(shù)：4 Pages

CODACA

科達(dá)嘉電子