PELTIER MODULE

FEATURES ? arcTEC? structure on select models ? enhanced reliability for high thermal cycling ? superior thermal performance ? silicon sealed ? wide ΔT max ? low profile ? precise temperature control ? solid state construction

文件：1.3204 Mbytes 頁(yè)數(shù)：9 Pages

CUID

PELTIER MODU LE

DESCRIPTION: 3.0 A PELTIER MODULE FEATURES ? solid state device ? small and lightweight ? precise temperature control ? quiet operation

文件：143.94 Kbytes 頁(yè)數(shù)：3 Pages

CUI

3.0 A PELTIER MODULE

DESCRIPTION: 3.0 A PELTIER MODULE FEATURES ? solid state device ? small and lightweight ? precise temperature control ? quiet operation

文件：290.67 Kbytes 頁(yè)數(shù)：5 Pages

CUI

PELTIER MODULE

FEATURES ? solid state device ? small and lightweight ? precise temperature control ? quiet operation

文件：340.75 Kbytes 頁(yè)數(shù)：6 Pages

CUID

PELTIER MODULE

FEATURES ? arcTEC? structure on select models ? enhanced reliability for high thermal cycling ? superior thermal performance ? silicon sealed ? wide ΔT max ? low profile ? precise temperature control ? solid state construction

文件：1.3204 Mbytes 頁(yè)數(shù)：9 Pages

CUID

PELTIER MODULE

DESCRIPTION: PELTIER MODULE FEATURES ? solid state device ? high performance cooler ? precise temperature control ? quiet operation

文件：625.52 Kbytes 頁(yè)數(shù)：6 Pages

CUI

NPN - High Current Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 3.7 x 3.7 MILS Emitter Bonding Pad Area 4.2 x 4.2 MILS Top Side Metalization Al - 30,000? Back Side Metalization Au-As - 13,000?

文件：735.62 Kbytes 頁(yè)數(shù)：2 Pages

CENTRAL

Small Signal Transistor NPN - High Current Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.7 x 3.9 MILS Emitter Bonding Pad Area 5.3 x 3.9 MILS Top Side Metalization Al - 30,000? Back Side Metalization Au - 18,000?

文件：476.93 Kbytes 頁(yè)數(shù)：2 Pages

CENTRAL

SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A, HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES ? Surge overload rating—50 Amperes peak ? Low forward voltage drop and reverse leakage ? Small size, simple installation ? Plastic package has Underwriter Laboratory Flammability Classification 94V-O ? Reliable low

文件：62.42 Kbytes 頁(yè)數(shù)：2 Pages

PANJIT

強(qiáng)茂

SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A, HEAT-SINK MTG 3A

VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES ? Surge overload rating—50 Amperes peak ? Low forward voltage drop and reverse leakage ? Small size, simple installation ? Plastic package has Underwriter Laboratory Flammability Classification 94V-O ? Reliable low

文件：123.83 Kbytes 頁(yè)數(shù)：2 Pages

TRSYS

Transys Electronics