| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>CMT；Package：DO-214AC；400W Surface Mount Transient Voltage Suppressors Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 400W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde 文件：3.2336 Mbytes 頁數(shù)：7 Pages | UNSEMI 優(yōu)恩半導體 | UNSEMI | ||
絲?。?strong>CMT；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde 文件：3.25781 Mbytes 頁數(shù)：7 Pages | UNSEMI 優(yōu)恩半導體 | UNSEMI | ||
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic 文件：288.4 Kbytes 頁數(shù)：8 Pages | CHAMP 虹冠電子 | CHAMP | ||
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic 文件：288.4 Kbytes 頁數(shù)：8 Pages | CHAMP 虹冠電子 | CHAMP | ||
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic 文件：288.4 Kbytes 頁數(shù)：8 Pages | CHAMP 虹冠電子 | CHAMP | ||
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic 文件：288.4 Kbytes 頁數(shù)：8 Pages | CHAMP 虹冠電子 | CHAMP | ||
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic 文件：288.4 Kbytes 頁數(shù)：8 Pages | CHAMP 虹冠電子 | CHAMP | ||
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic 文件：288.4 Kbytes 頁數(shù)：8 Pages | CHAMP 虹冠電子 | CHAMP | ||
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic 文件：288.4 Kbytes 頁數(shù)：8 Pages | CHAMP 虹冠電子 | CHAMP | ||
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new 文件：205.04 Kbytes 頁數(shù)：6 Pages | CHAMP 虹冠電子 | CHAMP |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
UN SEMICONDUCTOR |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
24+ |
N/A |
48000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
YAGEO |
25+ |
DO-214AA(SMB) |
59948 |
樣件支持,可原廠排單訂貨! |
詢價 | ||
YAGEO |
25+ |
DO-214AA(SMB) |
50000 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
VISHAY |
23+ |
SMB |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
VISHAY |
13+ |
SMB |
250 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
Littelfuse |
24+ |
DO-214AA |
55000 |
詢價 | |||
VISHAY |
08+ |
DO-214AA |
90000 |
絕對全新原裝強調只做全新原裝現(xiàn) |
詢價 | ||
VISHAY/威世 |
2447 |
NA |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
Vishay(威世) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持 |
詢價 |
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