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          首頁(yè)
                >CMPD2003>規(guī)格書(shū)列表
                
          
            
          
                
          
                    
          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          CMPD2003
          SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE
          
DESCRIPTION
The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.
          文件：110.25 Kbytes 頁(yè)數(shù)：2 Pages
          CENTRAL
          

          CMPD2003
          AN-1713 LM5116-12 Evaluation Board
          
Introduction
The LM5116-12 evaluation board is designed to provide the design engineer with a fully functional power
converter based on Emulated Current Mode Control to evaluate the LM5116 controller IC. The evaluation
board provides a 12V output with a 5A current capability. The operating inpu
          文件：368.03 Kbytes 頁(yè)數(shù)：12 Pages
          TI
          德州儀器
          

          CMPD2003
          SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE
          
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.
          文件：111.72 Kbytes 頁(yè)數(shù)：2 Pages
          CENTRAL
          

          CMPD2003
          HIGH VOLTAGE SILICON SWITCHING DIODE
          文件：590.47 Kbytes 頁(yè)數(shù)：2 Pages
          CENTRAL
          

          CMPD2003
          SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE
          文件：590.47 Kbytes 頁(yè)數(shù)：2 Pages
          CENTRAL
          

          CMPD2003
          Surface mount Diode-Switching Single: High Voltage
          Central
          

          CMPD2003-1
          SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE
          
DESCRIPTION
The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.
          文件：110.25 Kbytes 頁(yè)數(shù)：2 Pages
          CENTRAL
          

          CMPD2003C
          SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE
          
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.
          文件：111.72 Kbytes 頁(yè)數(shù)：2 Pages
          CENTRAL
          

          CMPD2003C
          SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE
          
DESCRIPTION
The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.
          文件：110.25 Kbytes 頁(yè)數(shù)：2 Pages
          CENTRAL
          

          CMPD2003S
          SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE
          
DESCRIPTION
The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.
          文件：110.25 Kbytes 頁(yè)數(shù)：2 Pages
          CENTRAL
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Case：
            SOT-23 (TO-236AB)
          • Configuration/ Description：
            Single
          • VRRM MAX：
            250V
          • Io MAX：
            200mA
          • IFSM MAX：
            4A
          • IR MAX：
            100nA
          • @VR：
            200V
          • VF MAX：
            1V
          • @IF：
            100mA
          • trr MAX：
            50ns
          • CJ MAX：
            5pF
          
            
          
        
          
            
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            更新時(shí)間2026-1-18 16:30:00
        
          
        
          
          
          
            
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