25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier

Description The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide (SiC) substrate, using a 0.25μm gate length fabrication process. The semiconductor offers 25 Watts of power from 6 to 12 G

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25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier

文件：2.61203 Mbytes 頁數(shù)：11 Pages

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25 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier

The CMPA601C025 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25- μm gate-length fabrication process. GaN on SiC has superior properties compared to silicon; gallium arsenide or GaN o ·40 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage;

MACOM

25 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier

The CMPA601C025 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25- μm gate-length fabrication process. GaN on SiC has superior properties compared to silicon; gallium arsenide or GaN o ·40 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage;

MACOM