30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA5585030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri

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WOLFSPEED

30 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier

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科銳

30 W; 5.5 - 8.5 GHz; GaN MMIC Power Amplifier

The CMP5585030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer ·Up to 50 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

Package：模具；包裝：托盤 類別：RF/IF，射頻/中頻和 RFID 射頻放大器 描述：IC AMP 5.5GHZ-8.5GHZ 30W

WOLFSPEED