25 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers

The CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CMPA5259025F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal fla ·30 dB Small Signal Gain\n·50% Efficiency at PSAT\n·Operation up to 28 V\n·High Breakdown Voltage;

MACOM

25 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers

文件：796.41 Kbytes 頁數(shù)：11 Pages

CREE

科銳

40 W, 5.0 - 6.0 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA5259025S is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide allowing the technology to offer greater power density and wider bandwidths compared to Si and GaAs dev

文件：1.17454 Mbytes 頁數(shù)：16 Pages

WOLFSPEED

M-FLAT

TOSHIBA/東芝

上傳：深圳龐田科技有限公司

CMSEMICON/中微9000

上傳：深圳市恒凱威科技開發(fā)有限公司