75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Description Wolfspeed’s CMPA2735075F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dr

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WOLFSPEED

75 W, 2.7 - 3.5 GHz, GaN MMIC Power Amplifier

The CMPA2735075 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·80 W Typical PSAT\n·28 V Operation\n·27 dB Small Signal Gain\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

75 W, 2.7 - 3.5 GHz, GaN MMIC Power Amplifier

The CMPA2735075 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·80 W Typical PSAT\n·28 V Operation\n·27 dB Small Signal Gain\n·High Breakdown Voltage\n·High Temperature Operation\n;

MACOM

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：AMPLIFIER, 2.7-3.5GHZ, GAN MMIC

WOLFSPEED