30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Description Cree’s CMPA2735030S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift ve

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30 W, 2.7 - 3.5 GHz, 50 V, GaN MMIC Power Amplifier

The CMPA2735030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·Operation up to 50 V\n·High Breakdown Voltage\n·Offered in a 5mm x 5mm; QFN package\n·High Temperature Operation;

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Package：32-VFQFN 裸露焊盤；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：RF/IF，射頻/中頻和 RFID 射頻放大器 描述：30W GAN MMIC PA, 50V, 2.7-3.5GHZ

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包裝：盒 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：2.7-3.5GHZ, AMP W/ CMPA2735030S

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