25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

Description Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift ve

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CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

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CREE

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25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

文件：955.72 Kbytes 頁數(shù)：11 Pages

CREE

科銳

25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

文件：955.72 Kbytes 頁數(shù)：11 Pages

CREE

科銳

25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

文件：955.72 Kbytes 頁數(shù)：11 Pages

CREE

科銳

25 W; 2.5 - 6.0 GHz; GaN MMIC Power Amplifier

The CMPA2560025 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·24 dB Small Signal Gain\n·25 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

25 W; 2.5 - 6.0 GHz; GaN MMIC Power Amplifier

The CMPA2560025 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·24 dB Small Signal Gain\n·25 W Typical PSAT\n·Operation up to 28 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：CMPA2560025F DEV BOARD WITH HEMT

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包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：BOARD DEMO AMP CKT CMPA2560025F

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