35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier

The CMPA2060035 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·35 W Typical PSAT\n·Operation up to 32 V\n·High Breakdown Voltage\n·High Temperature Operation\n;

MACOM

35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier

The CMPA2060035 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offe ·35 W Typical PSAT\n·Operation up to 32 V\n·High Breakdown Voltage\n·High Temperature Operation;

MACOM

35 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier

Description Cree’s CMP2060035D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velo

文件：400.4 Kbytes 頁數(shù)：8 Pages

WOLFSPEED

35 W, 2.0 - 6.0 GHz, GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri

文件：1.02124 Mbytes 頁數(shù)：10 Pages

WOLFSPEED