CMOS-4

1.5-Micron CMOS-4 and -4A The electrical characteristics of a particular gate array design are determined after evaluation of samples. This section describes the standard characteristics by a series of tables and graphs.

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NEC

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CMOS-4

1.5-Micron CMOS-4 and -4A The electrical characteristics of a particular gate array design are determined after evaluation of samples. This section describes the standard characteristics by a series of tables and graphs.

文件：289.53 Kbytes 頁數(shù)：6 Pages

NEC

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1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

文件：741.99 Kbytes 頁數(shù)：15 Pages

NEC

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1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

文件：741.99 Kbytes 頁數(shù)：15 Pages

NEC

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1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

文件：741.99 Kbytes 頁數(shù)：15 Pages

NEC

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1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

文件：741.99 Kbytes 頁數(shù)：15 Pages

NEC

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SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH2-4L is a high current, low VF silicon Schottky diode in an SOD-523 surface mount package. This device offers a VF as low as 0.33 volts and is designed for small signal general purpose applications where size and low loss is required.

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CENTRAL

ULTRAminiTM SURFACE MOUNT SCHOTTKY DIODES

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-3 type is a Silicon Schottky diode, epoxy molded in an ULTRAmini? surface mount package, designed for fast switching applications requiring a low forward voltage drop. MARKING CODE: 53

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CENTRAL

SURFACE MOUNT ENHANCED SPECIFICATION SILICON SCHOTTKY DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an enhanced version of the CMOSH-3 silicon Schottky diode in an SOD-523 surface mount package. MARKING CODE: 4E ENHANCED SPECIFICATIONS: ? IF from 100mA MAX to 200mA MAX ? BVR from 30V MIN to 40V MIN ? VF from 1.0V MAX to 0.8V MAX

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CENTRAL

SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 1.8 VOLTS THRU 47 VOLTS

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ1L8 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini? package, designed for applications requiring an extremely low operating current and low leakage.

文件：111.59 Kbytes 頁數(shù)：2 Pages

CENTRAL