絲?。?strong>CM8；Package：SOD-123；Zener Voltage Regulators 500 mW SOD-123 Surface Mount

Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD?123 package. These devices provide a convenient alternative to the leadless 34?package style. Specification Features ? 500 mW Rating on FR?4 or FR?5 Board ? Wide Zener Reverse Voltage Range ? 2.4

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ONSEMI

安森美半導(dǎo)體

Double Contact Bayonet Base

S-8 Double Contact Bayonet Base

文件：31.85 Kbytes 頁數(shù)：1 Pages

VCC

Dual IGBTMOD 800 Amperes/600 Volts

Description: Powerex IGBTMOD? Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

文件：76.69 Kbytes 頁數(shù)：4 Pages

POWEREX

HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................800A ● VCES ....................................................... 1700V ● Insulated Type ● 2-element in a Pack ● AISiC Baseplate

文件：64.47 Kbytes 頁數(shù)：4 Pages

POWEREX

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................800A ● VCES ....................................................... 3300V ● Insulated Type ● 1-elements in a pack (for brake) ● AISiC base plate APPLICATION DC choppers, Dynamic

文件：55.68 Kbytes 頁數(shù)：4 Pages

MITSUBISHI

三菱電機(jī)

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

文件：50.08 Kbytes 頁數(shù)：4 Pages

MITSUBISHI

三菱電機(jī)

Single IGBTMOD 800 Amperes/1200 Volts

Description: Powerex IGBTMOD? Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

文件：3.99635 Mbytes 頁數(shù)：4 Pages

POWEREX

Single IGBTMOD 800 Amperes/1400 Volts

Description: Powerex IGBTMOD? Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

文件：55.65 Kbytes 頁數(shù)：4 Pages

POWEREX

HIGH POWER SWITCHING USE INSULATED TYPE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................800A ● VCES ....................................................... 1700V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Converters, DC ch

文件：46.64 Kbytes 頁數(shù)：4 Pages

POWEREX

HIGH POWER SWITCHING USE INSULATED TYPE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ● IC...................................................................800A ● VCES ....................................................... 1700V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Converters, DC ch

文件：64.62 Kbytes 頁數(shù)：4 Pages

MITSUBISHI

三菱電機(jī)