50A,60V Heatsink Planar N-Channel Power MOSFET

文件：1.45993 Mbytes 頁數(shù)：6 Pages

THINKISEMI

思祁半導(dǎo)體

HIGH POWER SWITCHING USE

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MITSUBISHI

三菱電機

IGBT MODULES HIGH POWER SWITCHING USE

文件：111.58 Kbytes 頁數(shù)：6 Pages

MITSUBISHI

三菱電機

Six IGBTMOD Brake NF-Series Module 50 Amperes/1200 Volts

文件：570.58 Kbytes 頁數(shù)：6 Pages

POWEREX

IGBT MODULES HIGH POWER SWITCHING USE

文件：111.58 Kbytes 頁數(shù)：6 Pages

MITSUBISHI

三菱電機

Six IGBTMOD NF-Series Module 50 Amperes/1200 Volts

文件：536.99 Kbytes 頁數(shù)：4 Pages

POWEREX

IGBT MODULES HIGH POWER SWITCHING USE

文件：106.55 Kbytes 頁數(shù)：5 Pages

MITSUBISHI

三菱電機

絲?。?a target="_blank" title="Marking" href="/cm502b/marking.html">CM502B；Package：TSSOP；CMOS Strobed Hex Inverter/Buffer

Features: 2 TTL-load output drive capability 3-state outputs Common output-disable control Inhibit control = 100% tested for quiescent current at 20 V 5-V, 10-V, and 15-V parametric ratings Maximum input current of 1 4A at 18 V over full package-temperature range; 100 nA at 18 V

文件：894.19 Kbytes 頁數(shù)：19 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/cm502b/marking.html">CM502B；Package：TSSOP；CMOS Strobed Hex Inverter/Buffer

Features: 2 TTL-load output drive capability 3-state outputs Common output-disable control Inhibit control = 100% tested for quiescent current at 20 V 5-V, 10-V, and 15-V parametric ratings Maximum input current of 1 4A at 18 V over full package-temperature range; 100 nA at 18 V

文件：894.19 Kbytes 頁數(shù)：19 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/cm503b/marking.html">CM503B；Package：TSSOP；CMOS Hex Buffer

Features: 1 TTL4oad output drive capability 2 output-disable controls 3-state outputs ? Pin compatible with industry types MM80C97, MC14503; and 340097 | 5-V, 10-V, and 15-V parametric ratings Maximum input current of 1 LA at 18 V over full N package-temperature range; 100 nA at 18 V a

文件：900.87 Kbytes 頁數(shù)：19 Pages

TI

德州儀器