Dual IGBTMOD 300 Amperes/600 Volts

Description: Powerex IGBTMOD? Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from

文件：58.32 Kbytes 頁數(shù)：4 Pages

POWEREX

HIGH POWER SWITCHING USE

● IC ...................................................................300A ● VCES ............................................................600V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

文件：45.66 Kbytes 頁數(shù)：4 Pages

MITSUBISHI

三菱電機

HIGH POWER SWITCHING USE

● IC ...................................................................300A ● VCES ............................................................600V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

文件：98.08 Kbytes 頁數(shù)：4 Pages

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亞德諾

Dual IGBTMOD NF-Series Module 300 Amperes/600 Volts

Description: Powerex IGBTMOD? Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each tran sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter connects are isolated f

文件：69.62 Kbytes 頁數(shù)：4 Pages

POWEREX

Half Bridge Module

FEATURES · VCE(sat) with positive temperature coefficient · Low VCE(sat) · Low switching losses · High current capability · Short circuit rated APPLICATIONS ·Motor drives ·Servo drives

文件：443.59 Kbytes 頁數(shù)：5 Pages

ISC

無錫固電

Trench gate Field-Stop IGBT

FEATURES 62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und bereitsaufgetragenem Thermal Interface Material 62mm C-Series module with fast Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and pre-applied Thermal Interface Material APPLICATIONS

文件：502.08 Kbytes 頁數(shù)：5 Pages

ISC

無錫固電

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat s

文件：45.1 Kbytes 頁數(shù)：4 Pages

MITSUBISHI

三菱電機

Dual IGBTMOD 300 Amperes/1200 Volts

Description: Powerex IGBTMOD? Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

文件：55.74 Kbytes 頁數(shù)：4 Pages

POWEREX

Dual IGBTMOD NFH-Series Module 300 Amperes/1200 Volts

Description: Powerex IGBTMOD? Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse con

文件：246.12 Kbytes 頁數(shù)：4 Pages

POWEREX

Powerex Dual IGBT Modules are designed for use in switching applications.

Description: Powerex Dual IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated fro

文件：1.07754 Mbytes 頁數(shù)：9 Pages

POWEREX