絲?。?a target="_blank" title="Marking" href="/cm0107/marking.html">CM0107；Package：SOIC；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 頁數(shù)：21 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/cm0107/marking.html">CM0107；Package：SOIC；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 頁數(shù)：21 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/cm0107b/marking.html">CM0107B；Package：SO；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 頁數(shù)：21 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/cm0107b/marking.html">CM0107B；Package：SO；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 頁數(shù)：21 Pages

TI

德州儀器

絲印：CM0107B；Package：TSSOP；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 頁數(shù)：21 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/cm0107b/marking.html">CM0107B；Package：TSSOP；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 頁數(shù)：21 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/cm0107b/marking.html">CM0107B；Package：TSSOP；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 頁數(shù)：21 Pages

TI

德州儀器

絲印：CM0109B；Package：TSSOP；CMOS Quad Low-to-High Voltage Level Shifter

Features: Independence of power supply sequence considerations—V cc can exceed Vp, input signals can exceed both Ve and Vpp Up and down level-shifting capability Three-state outputs with seperate enable controls Standardized, symmetrical output characteristics 100% tested for quiescent

文件：885.65 Kbytes 頁數(shù)：19 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/cm0109b/marking.html">CM0109B；Package：TSSOP；CMOS Quad Low-to-High Voltage Level Shifter

Features: Independence of power supply sequence considerations—V cc can exceed Vp, input signals can exceed both Ve and Vpp Up and down level-shifting capability Three-state outputs with seperate enable controls Standardized, symmetrical output characteristics 100% tested for quiescent

文件：885.65 Kbytes 頁數(shù)：19 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/cm0109b/marking.html">CM0109B；Package：TSSOP；CMOS Quad Low-to-High Voltage Level Shifter

Features: Independence of power supply sequence considerations—V cc can exceed Vp, input signals can exceed both Ve and Vpp Up and down level-shifting capability Three-state outputs with seperate enable controls Standardized, symmetrical output characteristics 100% tested for quiescent

文件：885.65 Kbytes 頁數(shù)：19 Pages

TI

德州儀器