Photo-IC Sensors Digital Output

文件：198.6 Kbytes 頁(yè)數(shù)：4 Pages

CLAIREX

HIGH VOLTAGE SWITHCING DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. MARKING: CATHODE BAND

文件：337.47 Kbytes 頁(yè)數(shù)：2 Pages

CENTRAL

SURFACE MOUNT LOW LEAKAGE SILICON DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications. MARKING: CATHODE BAND

文件：75.3 Kbytes 頁(yè)數(shù)：2 Pages

CENTRAL

L-band internally pre-matched GaN-SiC HEMT

General description The CLL3H0914L-700 and CLL3H0914LS-700 are 700 W internally pre-matched RF GaN-SiC HEMTs power transistors that are usable in the frequency range from 0.9 GHz to 1.4 GHz. The devices offer excellent efficiency, thermal resistance and ruggedness suitable for short- and long-

文件：1.6499 Mbytes 頁(yè)數(shù)：18 Pages

AMPLEON

安譜隆

L-band internally pre-matched GaN-SiC HEMT

General description The CLL3H0914L-700 and CLL3H0914LS-700 are 700 W internally pre-matched RF GaN-SiC HEMTs power transistors that are usable in the frequency range from 0.9 GHz to 1.4 GHz. The devices offer excellent efficiency, thermal resistance and ruggedness suitable for short- and long-

文件：1.6499 Mbytes 頁(yè)數(shù)：18 Pages

AMPLEON

安譜隆

L-band internally pre-matched GaN-SiC HEMT

General description The CLL3H0914L-700 and CLL3H0914LS-700 are 700 W internally pre-matched RF GaN-SiC HEMTs power transistors that are usable in the frequency range from 0.9 GHz to 1.4 GHz. The devices offer excellent efficiency, thermal resistance and ruggedness suitable for short- and long-

文件：1.6499 Mbytes 頁(yè)數(shù)：18 Pages

AMPLEON

安譜隆

L-band internally pre-matched GaN-SiC HEMT

General description The CLL3H0914L-700 and CLL3H0914LS-700 are 700 W internally pre-matched RF GaN-SiC HEMTs power transistors that are usable in the frequency range from 0.9 GHz to 1.4 GHz. The devices offer excellent efficiency, thermal resistance and ruggedness suitable for short- and long-

文件：1.6499 Mbytes 頁(yè)數(shù)：18 Pages

AMPLEON

安譜隆

LOW NOISE ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low noise applications.

文件：109.37 Kbytes 頁(yè)數(shù)：2 Pages

CENTRAL

LOW NOISE ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low noise applications.

文件：109.37 Kbytes 頁(yè)數(shù)：2 Pages

CENTRAL

LOW NOISE ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low noise applications.

文件：109.37 Kbytes 頁(yè)數(shù)：2 Pages

CENTRAL