17-27GHz High Power Amplifier

Description The CHA5056 is three-stage monolithic high power amplifier. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a power PHEMT process, 0.15μm gate length, via holes through the substrate. It is supplied in c

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UMS

17-27GHz High Power Amplifier

Description The CHA5056-QGG is a three-stage monolithic high power amplifier. The circuit is manufactured with a power PHEMT process, 0.15μm gate length, via holes through the substrate. It is supplied in RoHS compliant SMD package Main Features ■ Broadband performance 17-27GHz

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UMS

17-27GHz High Power Amplifier

Description\nThe CHA5056-QGG is a three-stage monolithic high power amplifier.\nThe circuit is manufactured with a power PHEMT process, 0.15μm gate length, via holes through the substrate.\nIt is supplied in RoHS compliant SMD packageMain ■ Broadband performance 17-27GHz\n■ 28.5dBm Output Power @1dB compression\n■ 38dBm 3rd order intercept point\n■ High gain: 19dB\n■ ESD protected (see page 6)\n■ DC power consumption, 890mA @ 4.5V\n■ 28LQFN5x5?;

UMS

CMOS 4-BIT 1 CHIP MICROCOMPUTER

CMOS 4-bit 1 Chip Microcomputer

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SONYSony Corporation

索尼

DRV5056 Unipolar Ratiometric Linear Hall Effect Sensor

文件：1.51967 Mbytes 頁(yè)數(shù)：35 Pages

TI

德州儀器

Unipolar Ratiometric Linear Hall Effect Sensor

文件：1.25478 Mbytes 頁(yè)數(shù)：32 Pages

TI

德州儀器