絲?。?strong>CGY；Package：SMA；Automotive 400 W TVS in SMA

Features AEC-Q101 qualified Peak pulse power: – 400 W (10/1000 μs) – 2.3 kW (8/20 μs) Stand-off voltage range from 5 V to 70 V Unidirectional and bidirectional types Low leakage current: – 0.2 μA at 25 °C – 1 μA at 85 °C Operating Tj max: 150 °C JEDEC registered package outline Resin m

文件：642.05 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation)

GaAs MMIC ● Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones ● Dual band operation ● 31.5 dBm saturated output power @ PAE=55 typ. 29 dBm linear output power@ PAE=40 typ. ● Two independent amplifier chains ● Power ramp control ● Input matched to 50 ohms, simple output m

文件：304 Kbytes 頁數(shù)：18 Pages

SIEMENS

西門子

GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package)

GaAs MMIC ● Dual band GSM/PCN power amplifier ● 35dBm / 34dBm output power at 3.5 V ● Two amplifiers in a single package ● Power ramp control

文件：42.71 Kbytes 頁數(shù)：4 Pages

SIEMENS

西門子

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

1 GHz, 27 dB gain GaAs push-pull amplifier

General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET) GaAs dies. Features ■ Excellent linearity, stability and reliability ■ Extremely low noise ■ Excellent return lo

文件：58.67 Kbytes 頁數(shù)：7 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP