100 W, DC - 4.0 GHz, 50 V, GaN HEMT

文件：1.08824 Mbytes 頁數(shù)：11 Pages

CREE

科銳

100 W, DC - 4.0 GHz, 50 V, GaN HEMT

文件：1.08824 Mbytes 頁數(shù)：11 Pages

CREE

科銳

100-W; DC CGHV40100 3-GHz; 50-V; GaN HEMT

Up to 3 GHz Operation100 W Typical Output Power17.5 dB Small Signal Gain at 2.0 GHzApplication Circuit for 0.5 – 2.5 GHz55% Efficiency at PSAT50 V Operation ? Up to 3 GHz Operation\n? 100 W Typical Output Power\n? 17.5 dB Small Signal Gain at 2.0 GHz\n? Application Circuit for 0.5 – 2.5 GHz\n? 55% Efficiency at PSAT\n? 50 V Operation;

MACOM

Package：440193；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET HEMT 50V 440193

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100-W; DC CGHV40100 3-GHz; 50-V; GaN HEMT

Up to 3 GHz Operation100 W Typical Output Power17.5 dB Small Signal Gain at 2.0 GHzApplication Circuit for 0.5 – 2.5 GHz55% Efficiency at PSAT50 V Operation ? Up to 3 GHz Operation\n? 100 W Typical Output Power\n? 17.5 dB Small Signal Gain at 2.0 GHz\n? Application Circuit for 0.5 – 2.5 GHz\n? 55% Efficiency at PSAT\n? 50 V Operation;

MACOM

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：CGHV40100F DEV BOARD WITH HEMT

WOLFSPEED

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：TEST FIXTURE FOR CGHV40100F

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