50-W; DC – 4.0-GHz; 50-V; GaN HEMT

Up to 4 GHz Operation 77 W Typical Output Power 17.5 dB Small Signal Gain at 1.8 GHz Application Circuit for 0.8 – 2.0 GHz 53 % Efficiency at PSAT 50 V Operation ? Up to 4 GHz Operation\n?77 W Typical Output Power\n?17.5 dB Small Signal Gain at 1.8 GHz\n?Application Circuit for 0.8 – 2.0 GHz\n?53 % Efficiency at PSAT\n?50 V Operation;

MACOM

50 W, DC - 4.0 GHz, 50 V, GaN HEMT

文件：866.6 Kbytes 頁數(shù)：11 Pages

CREE

科銳

Package：440206；包裝：帶 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：50W, GAN HEMT, 50V, DC-4.0GHZ, P

WOLFSPEED

50 W, DC - 4.0 GHz, 50 V, GaN HEMT

文件：866.6 Kbytes 頁數(shù)：11 Pages

CREE

科銳

SCHOTTKY POWERMOD

● Schottky Barrier Rectifier ● Guard Ring Protection ● 400 Amperes/ 30 to 50 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

文件：163.59 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美

Schottky PowerMod

● Schottky Barrier Rectifier ● Guard Ring Protection ● 400 Amperes/ 30 to 50 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

文件：149.69 Kbytes 頁數(shù)：2 Pages

MICROSEMI

美高森美