30-W; DC – 6-GHz; 50-V; GaN HEMT

Up to 6 GHz Operation 30 W Typical Output Power 16 dB Gain Application circuit for 0.96 – 1.4 GHz 70% Efficiency at PSAT 50 V Operation ? Up to 6 GHz Operation\n?30 W Typical Output Power\n?16 dB Gain\n?Application circuit for 0.96 – 1.4 GHz\n?70% Efficiency at PSAT\n?50 V Operation;

MACOM

30 W, DC - 6 GHz, 50V, GaN HEMT

文件：1.16525 Mbytes 頁(yè)數(shù)：11 Pages

CREE

科銳

Package：440196；包裝：帶 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：30W, GAN HEMT, 50V, DC-6.0GHZ, P

WOLFSPEED

30 W, DC - 6 GHz, 50V, GaN HEMT

文件：1.16525 Mbytes 頁(yè)數(shù)：11 Pages

CREE

科銳

Schottky PowerMod

● Schottky Barrier Rectifier ● Guard Ring Protection ● 400 Amperes/ 30 to 50 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

文件：171.73 Kbytes 頁(yè)數(shù)：2 Pages

MICROSEMI

美高森美

Schottky PowerMod

文件：123.5 Kbytes 頁(yè)數(shù)：2 Pages

MICROSEMI

美高森美