30 W, DC - 6 GHz, 50V, GaN HEMT

文件：1.16525 Mbytes 頁數(shù)：11 Pages

CREE

科銳

30 W, DC - 6 GHz, 50V, GaN HEMT

文件：1.16525 Mbytes 頁數(shù)：11 Pages

CREE

科銳

30-W; DC – 6-GHz; 50-V; GaN HEMT

Up to 6 GHz Operation 30 W Typical Output Power 16 dB Gain Application circuit for 0.96 – 1.4 GHz 70% Efficiency at PSAT 50 V Operation ? Up to 6 GHz Operation\n?30 W Typical Output Power\n?16 dB Gain\n?Application circuit for 0.96 – 1.4 GHz\n?70% Efficiency at PSAT\n?50 V Operation;

MACOM

Package：440166；包裝：托盤 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET HEMT 50V 440166

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30-W; DC – 6-GHz; 50-V; GaN HEMT

Up to 6 GHz Operation 30 W Typical Output Power 16 dB Gain Application circuit for 0.96 – 1.4 GHz 70% Efficiency at PSAT 50 V Operation ? Up to 6 GHz Operation\n?16 dB Gain\n?70% Efficiency at PSAT\n?50 V Operation;

MACOM

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：CGHV40030F DEVELOPMENT BOARD

WOLFSPEED