100 W, 1800-2200 MHz, GaN HEMT for LTE

文件：1.00664 Mbytes 頁數(shù)：11 Pages

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100-W, 1800 – 2200-MHz, GaN HEMT for LTE

Wolfspeed’s CGHV22100 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 –?2.2-GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is availabl ·High degree of DPD correction can be applied;

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100 W, 1800-2200 MHz, GaN HEMT for LTE

文件：1.00664 Mbytes 頁數(shù)：11 Pages

CREE

科銳

100 W, 1800-2200 MHz, GaN HEMT for LTE

文件：1.00664 Mbytes 頁數(shù)：11 Pages

CREE

科銳

100 W, 1800-2200 MHz, GaN HEMT for LTE

文件：1.00664 Mbytes 頁數(shù)：11 Pages

CREE

科銳

100 W, 1800-2200 MHz, GaN HEMT for LTE

文件：1.00664 Mbytes 頁數(shù)：11 Pages

CREE

科銳

Package：440162；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET HEMT 50V 440162

WOLFSPEED