800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems

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CREE

科銳

DC-1.4 GHz, 800 W GaN Transistor

Description Wolfspeed’s CGHV14800F1 is an 800W packaged, partially-matched transistor utilizing Wolfspeed’s high performance, 0.4um GaN on SiC production process. The CGHV14800F1 operates up to 1.4 GHz and supports both defense and commercial-related avionics and radar applications. The CGHV14

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WOLFSPEED

800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems

文件：765.37 Kbytes 頁(yè)數(shù)：9 Pages

CREE

科銳

800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems

The CGHV14800 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14800 ideal for 1.2 - 1.4 GHz L-Band radar-amplifier applications. The package options are ceramic/metal flange ·910 W Typical Output Power\n·14 dB Power Gain\n·70% Typical Drain Efficiency\n·<0.3 dB Pulsed Amplitude Droop\n·Internally input and output matched;

MACOM

Package：440117；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET HEMT 50V 440117

WOLFSPEED

800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems

The CGHV14800 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14800 ideal for 1.2 - 1.4 GHz L-Band radar-amplifier applications. The package options are ceramic/metal flange ·910 W Typical Output Power\n·14 dB Power Gain\n·70% Typical Drain Efficiency\n·<0.3 dB Pulsed Amplitude Droop\n·Internally input and output matched;

MACOM

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評(píng)估和開發(fā)套件，開發(fā)板 描述：CGHV14800F DEV BOARD WITH HEMT

WOLFSPEED