45 W, RF Power GaN HEMT

文件：1.47264 Mbytes 頁數(shù)：15 Pages

CREE

科銳

45 W, RF Power GaN HEMT

文件：1.47264 Mbytes 頁數(shù)：15 Pages

CREE

科銳

45-W RF Power GaN HEMT

Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 12 dB Small Signal Gain at 4.0 GHz 55 W Typical PSAT 55% Efficiency at PSAT 28 V Operation ? Up to 4 GHz Operation\n?16 dB Small Signal Gain at 2.0 GHz\n?12 dB Small Signal Gain at 4.0 GHz\n?55 W Typical PSAT\n?55% Efficiency at PSAT\n?28 V Operation;

MACOM

Package：440193；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET HEMT 28V 440193

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45-W RF Power GaN HEMT

Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 12 dB Small Signal Gain at 4.0 GHz 55 W Typical PSAT 55% Efficiency at PSAT 28 V Operation ? Up to 4 GHz Operation\n?16 dB Small Signal Gain at 2.0 GHz\n?12 dB Small Signal Gain at 4.0 GHz\n?55 W Typical PSAT\n?55% Efficiency at PSAT\n?28 V Operation;

MACOM

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：CGH40045F DEV BOARD WITH HEMT

WOLFSPEED

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：BOARD DEMO AMP CIRCUIT CGH40045

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