| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 20V, 36A, RDS(ON) = 20m? @VGS = 4.5V. RDS(ON) = 30m? @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件:186.13 Kbytes 頁數(shù):4 Pages | CET 華瑞 | CET | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -40V, -28A, RDS(ON) = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件:422.09 Kbytes 頁數(shù):4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 40V, 24A, RDS(ON) = 30mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件:389.75 Kbytes 頁數(shù):4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 24A, RDS(ON) = 28mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 42mW @VGS = 4.5V. Lead free product is acquired. 文件:609.74 Kbytes 頁數(shù):4 Pages | CET-MOS 華瑞 | CET-MOS | ||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 46mW @VGS = 4.5V. -40V , -12A , RDS(ON) = 45mW @VGS = 10V. RDS(ON) = 65mW @VGS = 4.5V. TO-252-4L package. Lead free product is acquir 文件:804.63 Kbytes 頁數(shù):7 Pages | CET-MOS 華瑞 | CET-MOS | ||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES ■ 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V , -12A , RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capab 文件:633.12 Kbytes 頁數(shù):7 Pages | CET 華瑞 | CET | ||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES ■ 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabil 文件:685.37 Kbytes 頁數(shù):7 Pages | CET 華瑞 | CET | ||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-252-4L package. RDS(ON) = 46mW @VGS = 4.5V. Lead free product is acquired. -40V , -9A , RDS(ON) = 72mW @VGS = 10V. RDS(ON) = 110mW @VGS = 4. 文件:800.6 Kbytes 頁數(shù):7 Pages | CET-MOS 華瑞 | CET-MOS | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -20A, RDS(ON) = 42mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 65mW @VGS = -4.5V. Lead free product is acquired. 文件:631.68 Kbytes 頁數(shù):4 Pages | CET-MOS 華瑞 | CET-MOS | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -40V, -20A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件:415.28 Kbytes 頁數(shù):4 Pages | CET 華瑞 | CET |
技術(shù)參數(shù)
- BVDSS(V):
60
- Rds(on)mΩ@10V:
85
- ID(A):
15
- Qg(nC)@10V(typ):
8.1
- RθJC(℃/W):
4
- Pd(W):
38
- Configuration:
Single
- Polarity:
N
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
CET |
23+ |
TO252 |
7000 |
絕對全新原裝!100%保質(zhì)量特價!請放心訂購! |
詢價 | ||
CET |
2016+ |
TO-252 |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
CET |
12+ |
TO-252 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。 |
詢價 | ||
CET |
24+ |
TO252 |
3068 |
詢價 | |||
CET |
25+ |
DIP-14 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價 | ||
SR |
23+ |
TO-252-2 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
CET |
24+ |
TO-252 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
CET |
25+ |
TO-252 |
2800 |
原裝現(xiàn)貨!可長期供貨! |
詢價 | ||
CET |
25+23+ |
TO-252 |
46726 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
CET |
25+ |
TO-252 |
90000 |
進(jìn)口原裝現(xiàn)貨假一罰十價格合理 |
詢價 |
相關(guān)規(guī)格書
更多- COS5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- GRM21BR71H104JA11#
- TL074
相關(guān)庫存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074

