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          首頁 >CEU4>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          CEU41A2

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 20V, 36A, RDS(ON) = 20m? @VGS = 4.5V. RDS(ON) = 30m? @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:186.13 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEU4201

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ -40V, -28A, RDS(ON) = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:422.09 Kbytes 頁數(shù):4 Pages

          CET

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          CEU4204

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 40V, 24A, RDS(ON) = 30mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:389.75 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CEU4204

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 40V, 24A, RDS(ON) = 28mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 42mW @VGS = 4.5V. Lead free product is acquired.

          文件:609.74 Kbytes 頁數(shù):4 Pages

          CET-MOS

          華瑞

          CEU4269

          Dual Enhancement Mode Field Effect Transistor (N and P Channel)

          FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 46mW @VGS = 4.5V. -40V , -12A , RDS(ON) = 45mW @VGS = 10V. RDS(ON) = 65mW @VGS = 4.5V. TO-252-4L package. Lead free product is acquir

          文件:804.63 Kbytes 頁數(shù):7 Pages

          CET-MOS

          華瑞

          CEU4269

          Dual Enhancement Mode Field Effect Transistor (N and P Channel)

          FEATURES ■ 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V , -12A , RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capab

          文件:633.12 Kbytes 頁數(shù):7 Pages

          CET

          華瑞

          CEU4279

          Dual Enhancement Mode Field Effect Transistor (N and P Channel)

          FEATURES ■ 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabil

          文件:685.37 Kbytes 頁數(shù):7 Pages

          CET

          華瑞

          CEU4279

          Dual Enhancement Mode Field Effect Transistor (N and P Channel)

          FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-252-4L package. RDS(ON) = 46mW @VGS = 4.5V. Lead free product is acquired. -40V , -9A , RDS(ON) = 72mW @VGS = 10V. RDS(ON) = 110mW @VGS = 4.

          文件:800.6 Kbytes 頁數(shù):7 Pages

          CET-MOS

          華瑞

          CEU4301

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES -40V, -20A, RDS(ON) = 42mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 65mW @VGS = -4.5V. Lead free product is acquired.

          文件:631.68 Kbytes 頁數(shù):4 Pages

          CET-MOS

          華瑞

          CEU4301

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ -40V, -20A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:415.28 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          技術(shù)參數(shù)

          • BVDSS(V):

            60

          • Rds(on)mΩ@10V:

            85

          • ID(A):

            15

          • Qg(nC)@10V(typ):

            8.1

          • RθJC(℃/W):

            4

          • Pd(W):

            38

          • Configuration:

            Single

          • Polarity:

            N

          供應(yīng)商型號品牌批號封裝庫存備注價格
          CET
          23+
          TO252
          7000
          絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
          詢價
          CET
          2016+
          TO-252
          3000
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價
          CET
          12+
          TO-252
          15000
          全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
          詢價
          CET
          24+
          TO252
          3068
          詢價
          CET
          25+
          DIP-14
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價
          SR
          23+
          TO-252-2
          5000
          原裝正品,假一罰十
          詢價
          CET
          24+
          TO-252
          5000
          只做原裝公司現(xiàn)貨
          詢價
          CET
          25+
          TO-252
          2800
          原裝現(xiàn)貨!可長期供貨!
          詢價
          CET
          25+23+
          TO-252
          46726
          絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
          詢價
          CET
          25+
          TO-252
          90000
          進(jìn)口原裝現(xiàn)貨假一罰十價格合理
          詢價
          更多CEU4供應(yīng)商 更新時間2026-1-20 17:50:00
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