P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -3.2A, RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ SOT-23 package. ■ Lead-free plating ; RoHS compliant.

文件：430.27 Kbytes 頁數(shù)：4 Pages

CET

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -3.2A, RDS(ON) = 78mW @VGS = -10V. RDS(ON) = 120mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. Lead-free plating ; RoHS compliant.

文件：610.2 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞

P Channel MOSFET

CET

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -3.7A, RDS(ON) = 60mW @VGS = -10V. RDS(ON) = 82mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant.

文件：500.36 Kbytes 頁數(shù)：5 Pages

CET-MOS

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -3.4A, RDS(ON) = 70mW @VGS = -10V. RDS(ON) = 108mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant.

文件：407.74 Kbytes 頁數(shù)：5 Pages

CET-MOS

華瑞

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 3.2 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：346.88 Kbytes 頁數(shù)：2 Pages

CHENMKO

力勤