N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 3.0A, RDS(ON) = 72mΩ @VGS = 4.5V. RDS(ON) = 110mΩ @VGS = 2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：411.55 Kbytes 頁數(shù)：4 Pages

CET

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N-Channel 20 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? DC/DC Converters ? Load Switch for Portable Applications

文件：1.8833 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

N Channel Product

CET

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 4.4A, RDS(ON) = 40mW @VGS = 4.5V. RDS(ON) = 70mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant. RDS(ON) = 110mW @VGS = 1.8V.

文件：672.1 Kbytes 頁數(shù)：5 Pages

CET-MOS

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N Channel MOSFET

CET

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