N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 118A, RDS(ON) = 5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

文件：427.03 Kbytes 頁(yè)數(shù)：4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 118A, RDS(ON) = 5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

文件：648.26 Kbytes 頁(yè)數(shù)：4 Pages

CET-MOS

華瑞

N Channel MOSFET

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 90A , RDS(ON) = 5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

文件：475.66 Kbytes 頁(yè)數(shù)：4 Pages

CET

華瑞

N-Channel MOSFET uses advanced SGT technology

Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=130A,RDS(ON)

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DOINGTER

杜因特

13-16GHz High Power Amplifier

Description The CHA6042 is a four-stage pHEMT HPA MMIC designed for VSAT ground terminals and other radio applications. The CHA6042 provides 32dBm nominal output power at 1dB gain compression over the 13-16GHz frequency range, and 32dB small-signal gain. This product will be available in chip f

文件：90.64 Kbytes 頁(yè)數(shù)：6 Pages

UMS