N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 47A,RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 package.

文件：418.74 Kbytes 頁數(shù)：4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 47A,RDS(ON) = 12mW @VGS = 10V. RDS(ON) = 21mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 package. RoHS compliant.

文件：677.43 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞

N Channel MOSFET

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 51A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：415.7 Kbytes 頁數(shù)：4 Pages

CET

華瑞

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=55A,RDS(ON)

文件：1.27043 Mbytes 頁數(shù)：4 Pages

DOINGTER

杜因特

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 51A , RDS(ON) = 10mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 17mW @VGS = 4.5V. RoHS compliant.

文件：661.16 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞