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Sumida

勝美達

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 63A, RDS(ON) = 9.8 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant RDS(ON) = 14 mW @VGS = 4.5V.

文件：440.19 Kbytes 頁數(shù)：5 Pages

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 63A, RDS(ON) = 9.8 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant RDS(ON) = 13 mW @VGS = 4.5V.

文件：939.61 Kbytes 頁數(shù)：5 Pages

CET-MOS

華瑞

SP16T AoA / AoD Antenna Switch

FEATURES ? Optimized for Bluetooth? 5.1 AoA / AoD direction finding ? 16 phase balanced antenna ports with 50Ω termination ? Soft antenna switching (AoDTX-mode) to reduce unwanted spectral emissions in AoD 2?s slot operation (Patent Pending) ? Bluetooth AoA/AoD 1μs and 2μs slot compliant ?

文件：208.25 Kbytes 頁數(shù)：2 Pages

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