Dual Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 6.8A, RDS(ON) = 28m? @VGS = 10V. RDS(ON) = 42m? @VGS = 4.5V. ■ -30V, -4.8A, RDS(ON) = 58m? @VGS = -10V. RDS(ON) = 85m? @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabili

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CET

華瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V, 6.8A, RDS(ON) = 28mW @VGS = 10V. FEATURES RDS(ON) = 42mW @VGS = 4.5V. -30V, -5.4A, RDS(ON) = 45mW @VGS = -10V. RDS(ON) = 80mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：834.82 Kbytes 頁(yè)數(shù)：7 Pages

CET-MOS

華瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V, 6.8A, RDS(ON) = 28mW @VGS = 10V. FEATURES RDS(ON) = 42mW @VGS = 4.5V. -30V, -4.5A, RDS(ON) = 65mW @VGS = -10V. RDS(ON) = 95mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：934.92 Kbytes 頁(yè)數(shù)：7 Pages

CET-MOS

華瑞

N&P-Channel Complementary MOSFET

General Features ?+ N-Channel ? Vos=30V. o=B.0A Rosny =17m0@ Vos=10V Rosco =24m0@Vos=4 5V + P-Channel * Vos=-30V,Ip=-6A Rosn =40mQ @Ves=-10V Rosco =60mQ @Vos=-45V ?High Power and current handing capabilly ?Lead ree products acquired ? Surace Mount Package Application

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TECHPUBLIC

臺(tái)舟電子

Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 30 Volts CURRENT 7 Ampere P-channel: VOLTAGE 30 Volts CURRENT 5.2 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Servo moto

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CHENMKO

力勤