P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -8A, RDS(ON) = 20m? @VGS = -10V. RDS(ON) = 35m? @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

文件：500.86 Kbytes 頁數(shù)：5 Pages

CET

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES\n■ -30V, -8A, RDS(ON) = 20m? @VGS = -10V.\n????????????????? RDS(ON) = 35m? @VGS = -4.5V.\n■ Super high dense cell design for extremely low RDS(ON).\n■ High power and current handing capability.\n■ Surface mount Package. ■ -30V, -8A, RDS(ON) = 20m? @VGS = -10V.\n????????????????? RDS(ON) = 35m? @VGS = -4.5V.\n■ Super high dense cell design for extremely low RDS(ON).\n■ High power and current handing capability.\n■ Surface mount Package.;

CET

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -8A, RDS(ON) = 20mW @VGS = -10V. RDS(ON) = 33mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant.

文件：527.4 Kbytes 頁數(shù)：5 Pages

CET-MOS

華瑞

絲印：4435A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES | @ Vos=-30Vjo= 9A | ? Rosczmogesmioy | ? Ros(Ov=35mO@Ves=4.5V |

文件：2.886 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

P-channel Enhancement Mode Power MOSFET

Features ? VDS= -30V, ID= -9A RDS(ON)

文件：1.85515 Mbytes 頁數(shù)：5 Pages

BYCHIP

百域芯

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -8A, RDS(ON) = 20m? @VGS = -10V. RDS(ON) = 33m? @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：106.95 Kbytes 頁數(shù)：4 Pages

CET

華瑞

P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested APPLICATIONS ? Load Switch ? Battery Switch

文件：1.00479 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

P-Channel MOSFET uses advanced trench technology

文件：1.29267 Mbytes 頁數(shù)：4 Pages

DOINGTER

杜因特

P-Channel Enhancement Mode Field Effect Transistor

文件：396.07 Kbytes 頁數(shù)：4 Pages

CET

華瑞

P Channel MOSFET

CET

華瑞