P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -8.5A, RDS(ON) = 21.5mW @VGS = -10V. RDS(ON) = 28mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：490.11 Kbytes 頁數(shù)：5 Pages

CET-MOS

華瑞

P Channel MOSFET

CET

華瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -31A, RDS(ON) = 18.5mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 25mW @VGS = -4.5V. RoHS compliant.

文件：516.72 Kbytes 頁數(shù)：5 Pages

CET-MOS

華瑞

Off-Line CV/CC ZVS Flyback Integrated Switcher IC with 750 V PowiGaN, Active Clamp Drive and Synchronous Rectification

Highly Integrated, Compact Footprint ? Zero voltage switching (ZVS) flyback controller with driver for ClampZeroTM (active clamp IC) ? Unique control algorithm enables ZVS in both DCM and CCM ? Robust 750 V PowiGaNTM primary switch ? Steady-state switching frequency up to 155 kHz minimizes t

文件：2.49479 Mbytes 頁數(shù)：36 Pages

POWERINTPower Integrations, Inc.

荷蘭帕沃英蒂格盛有限公司

Moulded Case Circuit Breakers 16-2500 Amperes for IEC 60947-2 Applications

文件：975.8 Kbytes 頁數(shù)：45 Pages

EATON

伊頓