Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 9A, RDS(ON) = 16m? @VGS = 10V. RDS(ON) = 23m? @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：251.52 Kbytes 頁數(shù)：4 Pages

CET

華瑞

Dual N-Channel 30 V (D-S) MOSFET

FEATURES ? TrenchFET??Power MOSFET ? 100 Rg Tested ? 100 UIS Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Notebook System Power ? Low Current DC/DC

文件：1.05355 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

N Channel MOSFET

CET

華瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 9 Ampere FEATURE * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. * Small flat package. (SO-8 ) APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：508.73 Kbytes 頁數(shù)：3 Pages

CHENMKO

力勤

Laser Processed Logic Device Family

- Laser Processed Logic Device (LPLD?) technology offers the ultimate combination of performance, flexibility, and low cost - Functionally, architecturally, and electrically compatible with industry-standard Altera? MAX? 3000 - High Density 5,000 Usable gates 256 Macrocells 158 Maximum

文件：166.66 Kbytes 頁數(shù)：14 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Warp Professional CPLD Software

文件：118.91 Kbytes 頁數(shù)：8 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司