Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■ 20V, 6A, RDS(ON) = 30m? @VGS = 4.5V. RDS(ON) = 40m? @VGS = 2.5V. ■ -20V, -4.3A, RDS(ON) = 90m? @VGS = -4.5V. RDS(ON) = 120m? @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability

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CET

華瑞

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

CET

華瑞

DECT 500 mW power amplifier

GENERAL DESCRIPTION The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply. When power control is not required, it can be operated without negative supply voltage. FEATURES ? Power Amplifier (PA) overall eff

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PHI

PHI

Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 20 Volts CURRENT 6 Ampere P-channel: VOLTAGE 20 Volts CURRENT 4.3 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Servo moto

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CHENMKO

力勤

HDMI Transmitter Port Protection and Interface Device

Product Description The CM2030 HDMI Transmitter Port Protection and Interface Device is specifically designed for next generation HDMI Host interface protection. An integrated package provides all ESD, slew rate limiting on CEC line, level shifting/isolation, overcurrent output protection and ba

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CALMIRCO