| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
P-Channel 20-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Built in ESD Protection with Zener Diode ? Typical ESD Performance: 1800 V ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Portable Devices - Load Switch - Battery Sw 文件：1.03126 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 9.3A, RDS(ON) = 18mW @VGS = 4.5V. RDS(ON) = 24mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. 文件：461.72 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5V. RDS(ON) = 32mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package. 文件：446.1 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -20V, -7.2A, RDS(ON) = 30m? @VGS = -4.5V. ? ? ? ? ? ? ? ? ? ? ? ?RDS(ON) = 43m? @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package. 文件：276.94 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -20V, -7.2A, RDS(ON) = 30m? @VGS = -4.5V. RDS(ON) = 43m? @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package. 文件：276.94 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | ||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) 20V, 8A, RDS(ON) = 20mW @VGS = 4.5V. FEATURES -30V, -7A, RDS(ON) = 26mW @VGS = -10V. RDS(ON) = 40mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 26mW @VGS = 2.5V. 文件：866.83 Kbytes 頁數(shù)：7 Pages | CET-MOS 華瑞 | CET-MOS | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -20V, -6A, RDS(ON) = 44mΩ @VGS = -4.5V. RDS(ON) = 65mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package. 文件：410.99 Kbytes 頁數(shù)：4 Pages | CET 華瑞 | CET | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -6A, RDS(ON) = 44mW @VGS = -4.5V. RDS(ON) = 65mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. 文件：617.27 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, -5.3A, RDS(ON) = 45mW @VGS = -4.5V. RDS(ON) = 65mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. 文件：648.94 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES ■ 20V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. ■ -20V, -4A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. ■ S 文件：621.57 Kbytes 頁數(shù)：7 Pages | CET 華瑞 | CET |
技術(shù)參數(shù)
- Ppp(W)：
200
- VRWM(V)：
150
- VBRMin(V)：
167
- VBRMax(V)：
185
- IR(uA)：
1
- it(mA)：
1
- VC(V)：
243
- IPP(A)：
0.8
- Package：
SOD-123FL
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SUNMATE(森美特) |
2019+ROHS |
SOD-123 |
66688 |
森美特高品質(zhì)產(chǎn)品原裝正品免費(fèi)送樣 |
詢價(jià) | ||
VISHAYMAS |
25+23+ |
SOD-123FL |
25145 |
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ision |
20+ |
SOD-123FL |
36800 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
JINGDAO/晶導(dǎo)微 |
21+ |
SOD-123FL |
3000 |
晶導(dǎo)優(yōu)勢(shì)分銷 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價(jià) | ||
JINGDAO/晶導(dǎo)微 |
23+ |
SOD-123FL |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
MCC |
24+ |
SOD-123FL |
99550 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
CHINA |
1822+ |
SOD-123 |
39000 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ision |
SOD-123FL |
99080 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
24+ |
N/A |
57000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
捷捷微 |
23+ |
SOD-123FL |
50000 |
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu) |
詢價(jià) |
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