Dual N-Channel 60 V (D-S) 175 ?C MOSFET

FEATURES ? TrenchFET? power MOSFET ? 100 Rg and UIS tested

文件：1.09119 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 6.3A, RDS(ON) = 30mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：143.83 Kbytes 頁數(shù)：4 Pages

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V, 6.1A, RDS(ON) = 32mW @VGS = 10V. RDS(ON) = 46mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. -40V, -5.2A, RDS(ON) = 43mW @VGS = 10V. RDS(ON) = 65mW @VGS =

文件：782.58 Kbytes 頁數(shù)：7 Pages

CET-MOS

華瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 40V, 6.1A, RDS(ON) = 32m? @VGS = 10V. RDS(ON) = 46m? @VGS = 4.5V. ■ -40V, -5.2A, RDS(ON) = 43m? @VGS = 10V. RDS(ON) = 65m? @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability

文件：565.99 Kbytes 頁數(shù)：7 Pages

CET

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V, 6.0A, RDS(ON) = 34mW @VGS = 10V. RDS(ON) = 49mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. -40V, -5.2A, RDS(ON) = 43mW @VGS = 10V. RDS(ON) = 65mW @VGS = 4.5V.

文件：1.33561 Mbytes 頁數(shù)：7 Pages

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華瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

40V, 6.1A, RDS(ON) = 32mW @VGS = 10V. FEATURES RDS(ON) = 46mW @VGS = 4.5V. -40V, -4.3A, RDS(ON) = 66mW @VGS = -10V. RDS(ON) = 105mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is a

文件：919.21 Kbytes 頁數(shù)：7 Pages

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華瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V, -4.3A, RDS(ON) = 66mΩ @VGS = -10V. RDS(ON) = 105mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabil

文件：493.84 Kbytes 頁數(shù)：7 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 6.6A, RDS(ON) = 36m? @VGS = 10V. RDS(ON) = 48m? @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ???????■ Surface mount Package.

文件：742.53 Kbytes 頁數(shù)：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -6A, RDS(ON) = 42m? @VGS = -10V. RDS(ON) = 65m? @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：731.53 Kbytes 頁數(shù)：4 Pages

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Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -5A, RDS(ON) = 44mW @VGS = -10V. RDS(ON) = 65mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：582.6 Kbytes 頁數(shù)：4 Pages

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