Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -6.5A, RDS(ON) = 18mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package. RoHS compliant. RDS(ON) = 24mW @VGS = -2.5V.

文件：608.71 Kbytes 頁數(shù)：4 Pages

CET-MOS

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P Channel MOSFET

CET

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5V. RDS(ON) = 32mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：446.1 Kbytes 頁數(shù)：4 Pages

CET

華瑞

T-1 3/4 Wire Terminal (standard)

T-1 3/4 Wire Terminal (standard)

文件：219.61 Kbytes 頁數(shù)：1 Pages

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Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

文件：378.26 Kbytes 頁數(shù)：8 Pages

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