| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
CEF04N6 | N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 2.5A , RDS(ON)=2.5?@VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole 文件：43.13 Kbytes 頁數(shù)：5 Pages | CET 華瑞 | CET | |
CEF04N6 | N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：626.36 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | |
CEF04N6 | N Channel MOSFET | CET 華瑞 | CET | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：628 Kbytes 頁數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. 文件：505.8 Kbytes 頁數(shù)：5 Pages | CET-MOS 華瑞 | CET-MOS | ||
N Channel MOSFET | CET 華瑞 | CET |
技術(shù)參數(shù)
- BVDSS(V)：
600
- Rds(on)mΩ@10V：
2400
- ID(A)：
4.2
- Qg(nC)@10V(typ)：
13
- RθJC(℃/W)：
3.6
- Pd(W)：
35
- Configuration：
Single
- Polarity：
N
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
CET |
23+ |
TO220/3 |
7000 |
絕對全新原裝!100%保質(zhì)量特價!請放心訂購! |
詢價 | ||
CET |
24+ |
TO2203 |
20 |
詢價 | |||
CET |
23+ |
TO-220 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
CET |
2022+ |
20 |
全新原裝 貨期兩周 |
詢價 | |||
CET/華瑞 |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
CET/華瑞 |
2022+ |
TO-220F |
32500 |
原廠代理 終端免費提供樣品 |
詢價 | ||
CET |
23+ |
TO-220F |
12800 |
公司只有原裝 歡迎來電咨詢。 |
詢價 | ||
23+ |
TO-220F |
2800 |
正品原裝貨價格低 |
詢價 | |||
CET/華瑞 |
20+ |
TO-220F |
32500 |
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝 |
詢價 | ||
CET |
25+ |
TO220 |
25 |
原裝正品,假一罰十! |
詢價 |
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